泰安High Purity quartz crucible for semiconductor

Semiconductor Quartz Crucible Characteristics

High Temperature Resistance and Thermal Stability

1. Molten silica softening point is approximately 1730℃, with a long-term operating temperature of 1400~1550℃, suitable for single-crystal silicon pulling processes.

2. Extremely low coefficient of thermal expansion, resistant to rapid heating and cooling, and less prone to cracking during high-temperature temperature fluctuations, suitable for continuous heating, feeding, and crystal pulling cycles in single-crystal furnaces.

3. Inner coating (barium-based coating) enhances high-temperature stability and inhibits reactions between molten silicon and the crucible.

High Purity

1. Made from high-purity quartz raw materials, with metal impurities (iron, aluminum, calcium, sodium, potassium) at the ppb level, avoiding contamination of the silicon melt.

2. Low alkali metal content prevents alkali ions from diffusing into the silicon rod at high temperatures, causing wafer leakage and reduced minority carrier lifetime.

3. Differentiate between photovoltaic-grade and electronic-grade crucibles: Ultra-high purity quartz is used for 12-inch chip wafers, with stricter impurity control.

Chemical Inertness, Resistant to Silicon Melt Erosion

1. Does not react violently with silicon or high-purity inert gases (argon) at room temperature or high temperatures.

2. Only generates SiO gas slowly and weakly. The inner special barrier coating significantly reduces the silicon melting rate and decreases the oxygen content of the silicon single crystal.

3. Not corroded or penetrated by acids, alkalis, or molten silicon, ensuring stable silicon purity during crystal growth.

Light Transmittance (Infrared Radiation Thermal Conductivity)

1. High transmittance of infrared heating light. Heat from the graphite heater in the single crystal furnace can penetrate the crucible to uniformly heat the internal silicon material, resulting in uniform melting without localized cold spots.

2. Ensures stable temperature fields inside and outside the crucible, improving the stability of single crystal diameter and reducing the risk of crystal breakage.

Insulation, Non-Conductive

Maintains insulation properties even at high temperatures, preventing leakage and discharge interference within the single crystal furnace, making it suitable for crystal growth electrical control environments.

Applications of Semiconductor Quartz Crucible

1. Photovoltaic silicon wafer factories (mainly using quartz crucibles)

2. Upstream integrated circuit chip manufacturing (wafer substrate workshops)

3. Third-generation semiconductor substrate workshops (SiC/GaN)

4. LED, Mini LED, and UV chip factories

5. Vacuum deposition/evaporation workshops (small tungsten, molybdenum, and tantalum evaporation crucibles)

6. Semiconductor material purification & sputtering target processing plants

7. Power semiconductor and packaging plants

8. Research institutes & laboratories

Size Chart of Semiconductor Quartz Crucible

We are committed to delivering optimal quartz crucible tailored to your exact specifications. Our dedicated team ensures meticulous adherence to your instructions, striving to exceed customer expectations. Additionally, we offer the flexibility of customized sizes to accommodate your unique requirements.

Drawing and specification requirements shall be provided if customized design request.

Quartz Crucible Packing

Quartz crucibles are carefully packaged in appropriate containers to avoid any potential damage.